Thin film transistor on fiber and manufacturing method of the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChwee Iin Choong, Sang-won Kim, Jong-jin Park, Ji-hyun Bae, Jung-kyun Im, Sang-hun Jeon
Life of this patent
Estimating the term…
Abstract
Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.
Claims13
A thin film transistor formed on a fiber, the thin film transistor comprising:
- a first electrode, a second electrode, and a gate electrode, the first, the second, and the gate electrodes being formed on the fiber;
- a channel formed between the first electrode and the second electrode;
- an encapsulant encapsulating the fiber, the first electrode, the second electrode, the gate electrode and an upper surface of the channel;
- and
- a gate insulating layer formed in a portion of an inner area of the encapsulant,
- wherein the gate insulating layer is not formed in an entire area of an encapsulating zone encapsulated by the encapsulant, but is only formed in a portion of the encapsulating zone encapsulated by the encapsulant, and
- the encapsulating zone includes an empty space.
A method of manufacturing a thin film transistor disposed on a fiber, the method comprising:
- forming a conductive material on the fiber;
- patterning the conductive material to form a first electrode, a second electrode, and a gate electrode;
- forming a channel between the first electrode and the second electrode;
- and
- encapsulating the fiber, the first electrode, the second electrode, the gate electrode, and the channel in an encapsulant,
- wherein the encapsulant comprises a gate insulating layer,
- the gate insulating layer is not formed in an entire area of an encapsulating zone encapsulated by the encapsulant, but is only formed in a portion of the encapsulating zone encapsulated by the encapsulant, and
- the encapsulating zone includes an empty space.
Dependencies are inferred from the claim text.