Integrated circuits with fets having nanowires and methods of manufacturing the same
AssigneeGlobalfoundries Inc.
InventorsJan Hoentschel, Stefan Flachowsky, Gerd Zschaetzsch
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Abstract
Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming a stack overlying a substrate. The stack includes a silicon germanium layer and a silicon layer, where the silicon germanium layer has a first germanium concentration. The stack is condensed to produce a second germanium concentration in the germanium layer, where the second germanium concentration is greater than the first germanium concentration. A fin is formed that includes the stack, and a gate is formed overlying the fin.
Claims19
A method of forming an integrated circuit comprising:
- forming a stack overlying a substrate, wherein the stack comprises a silicon germanium layer and a silicon layer, wherein the silicon germanium layer has a first germanium concentration;
- condensing the stack to produce a second germanium concentration in the silicon germanium layer, wherein the second germanium concentration is greater than the first germanium concentration;
- forming a fin that includes the stack;
- and
- forming a gate overlying the fin.
A method of fabricating a nanowire comprising:
- epitaxially forming a stack over a substrate, wherein the stack comprises a silicon germanium layer and a silicon layer, and wherein the silicon germanium layer has a first silicon germanium layer volume;
- condensing the stack to produce a second silicon germanium layer volume less than the first silicon germanium layer volume;
- and
- forming a nanowire from the silicon germanium layer.
Dependencies are inferred from the claim text.