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US 9,425,316 B2Granted
Source/drain contacts for non-planar transistors
AssigneeIntel Corporation
InventorsSameer S. Pradhan, Subhash M. Joshi, Jin-Sung Chun
Life of this patent
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Abstract
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
Claims19
An apparatus, comprising:
- a fin comprising silicon;
- a non-planar gate electrode over at least a portion of the fin;
- a first spacer on a first side of the gate electrode;
- a second spacer on a second side of the gate electrode;
- a first dielectric material, the first spacer being between the gate electrode and at least a portion of the first dielectric material;
- a cap dielectric layer above the gate electrode, at least a portion of the first dielectric material being below the cap dielectric layer;
- a second dielectric layer above the cap dielectric layer;
- a source region at least partially in the fin, the source region comprising silicon and at least one other element;
- a silicide region on the source region, the silicide region comprising silicon and titanium and being at least substantially free from nickel;
- a source contact that is in contact with at least a portion of the second dielectric layer, at least a portion of the cap dielectric layer, and at least a portion of the first dielectric material, the source contact comprising:
- an interface layer on a bottom and sides of the contact, the contact interface layer comprising titanium and nitrogen;
- and
- a contact fill material, the contact fill material comprising tungsten, the interface layer being between at least a portion of the contact fill material and the silicide region at the bottom of the contact, and the interface layer being between at least a portion of the fill material and at least a portion of the first dielectric material at the sides of the contact, and the interface layer further being between at least a portion of the contact fill material and at least a portion of the second dielectric material at the sides of the contact;
- and
- wherein, in at least one cross section through the fin, all of the silicide region is under the source contact.
12 more elements
An apparatus, comprising:
- a fin comprising silicon;
- a non-planar gate electrode over at least a portion of the fin;
- a first spacer on a first side of the gate electrode;
- a second spacer on a second side of the gate electrode;
- a first dielectric material, the first spacer being between the gate electrode and at least a portion of the first dielectric material;
- a cap dielectric layer above the gate electrode, at least a portion of the first dielectric material being below the cap dielectric layer;
- a second dielectric layer above the cap dielectric layer;
- a source region at least partially in the fin, the source region comprising silicon and at least one other element;
- a silicide region on the source region, the silicide region comprising silicon and titanium and being at least substantially free from nickel;
- a source contact that extends through at least a portion of the second dielectric layer, at least a portion of the first dielectric material, and is in contact with at least a portion of the cap dielectric layer, and at least a portion of the first dielectric material, the source contact including an interface layer comprising titanium and nitrogen and a fill material comprising tungsten interior to the interface layer;
- and
- wherein, in at least one cross section through the fin, substantially all of the silicide region is under the source contact.
9 more elements
Dependencies are inferred from the claim text.