FinFET semiconductor device with isolated fins made of alternative channel materials
AssigneeGlobalfoundries Inc.
InventorsAjey Poovannummoottil Jacob, Murat Kerem Akarvardar
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Abstract
One illustrative method disclosed herein includes, among other things, oxidizing a lower portion of an initial fin structure to thereby define an isolation region that vertically separates an upper portion of the initial fin structure from a semiconducting substrate, performing a recess etching process to remove a portion of the upper portion of the initial fin structure so as to define a recessed fin portion, forming a replacement fin on the recessed fin portion so as to define a final fin structure comprised of the replacement fin and the recessed fin portion, and forming a gate structure around at least a portion of the replacement fin.
Claims7
A FinFET device, comprising:
- a semiconducting substrate;
- a fin structure vertically separated from said substrate, said fin structure comprising an upper fin portion and a bottom fin portion, wherein said bottom fin portion is comprised of the substrate material and said upper fin portion is comprised of a semiconducting material that is different than said substrate material;
- an isolation region positioned below said bottom fin portion that vertically separates said fin structure from said semiconducting substrate;
- and
- a gate structure around at least a portion of said upper fin portion.
A FinFET device, comprising:
- a silicon substrate;
- a fin structure vertically separated from said substrate, said fin structure comprising an upper fin portion and a bottom fin portion, wherein said upper fin portion is made of substantially pure germanium or silicon-germanium (Si(1-x)Ge(x)) and said lower fin portion is made of the silicon substrate material, wherein said bottom fin portion has a bottom, downward facing faceted surface;
- an isolation region positioned below said bottom fin portion that vertically separates said fin structure from said silicon substrate;
- and
- a gate structure around at least a portion of said upper fin portion.
A FinFET device, comprising:
- a silicon substrate;
- a fin structure vertically separated from said silicon substrate, said fin structure comprising an upper fin portion and a bottom fin portion, wherein said bottom fin portion is comprised of the silicon substrate material and said upper fin portion is comprised of a semiconducting material that is different than said silicon substrate material and wherein said bottom fin portion has a bottom, downward facing faceted surface;
- a silicon dioxide isolation region positioned below said bottom fin portion that vertically separates said fin structure from said silicon substrate;
- and
- a gate structure around at least a portion of said upper fin portion.
Dependencies are inferred from the claim text.