Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsuing Chen, Hou-Yu Chen, Chie-Iuan Lin, Yuan-Shun Chao, Kuo Lung Li
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Abstract
In a method for manufacturing a semiconductor device, a fin structure including a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer is formed. An isolation insulating layer is formed so that the second semiconductor layer of the fin structure protrudes from the isolation insulating layer while the oxide layer and the first semiconductor layer are embedded in the isolation insulating layer. A third semiconductor layer is formed on the exposed second semiconductor layer so as to form a channel.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a fin structure including a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer;
- forming an isolation insulating layer so that the second semiconductor layer of the fin structure protrudes from the isolation insulating layer and is exposed while the oxide layer and the first semiconductor layer are embedded in the isolation insulating layer;
- and
- forming a third semiconductor layer to entirely cover the exposed second semiconductor layer so as to form a channel of the semiconductor device.
A method for manufacturing a semiconductor device, comprising:
- forming a stack of semiconductor layers including a first semiconductor layer, an intermediate semiconductor layer formed over the first semiconductor layer, and a second semiconductor layer formed over the intermediate semiconductor layer,
- forming a fin structure, by patterning the first semiconductor layer, the intermediate semiconductor layer and the second semiconductor layer;
- oxidizing the intermediate semiconductor layer in the fin structure;
- forming an isolation insulating layer so that the second semiconductor layer of the fin structure protrudes from the isolation insulating layer and is exposed while the oxidized intermediate layer and the first semiconductor layer are embedded in the isolation insulating layer;
- and
- forming a third semiconductor layer to entirely cover the exposed second semiconductor layer so as to form a channel of the semiconductor device.
A method for manufacturing a semiconductor device, comprising:
- forming a stack of semiconductor layers including a first semiconductor layer, an intermediate semiconductor layer formed over the first semiconductor layer, and a second semiconductor layer formed over the intermediate semiconductor layer,
- forming fin structures, by patterning the first semiconductor layer, the intermediate semiconductor layer and the second semiconductor layer, such that each of the fin structures including the first semiconductor layer, the intermediate semiconductor layer and the second semiconductor layer;
- oxidizing the intermediate semiconductor layer in each of the fin structures;
- forming an isolation insulating layer so that the second semiconductor layer of each of the fin structures protrudes from the isolation insulating layer and is exposed while the oxidized intermediate layer and the first semiconductor layer of each of the fin structures are embedded in the isolation insulating layer;
- and
- forming a third semiconductor layer to entirely cover the exposed second semiconductor layer of each of the fin structures.
Dependencies are inferred from the claim text.