Methods for forming wrap around contact

A method, comprising:

• forming source and drain regions of semiconductor material which are separated from one another by a channel region, wherein the source or drain region has top and bottom surfaces,
• forming a capping material that surrounds the top and bottom surfaces of the source or drain region;
• forming a dielectric material over the capping material;
• removing the dielectric material to expose the capping material on the top and bottom surfaces of the source or drain region;
• performing a first etch configured to remove the capping material from the top surfaces of the source or drain region to expose the semiconductor material on the top surfaces;
• and
• performing a second etch configured to remove the capping material from the bottom surfaces of the source or drain region to expose the semiconductor material on the bottom surfaces, wherein the second etch utilizes an etchant with a selectivity between the semiconductor material and capping material such that the capping material is etched at a higher rate than the semiconductor material.

A method, comprising:

• forming a semiconductor fin extending vertically from a surface of a substrate and comprising source and drain regions in or on the semiconductor fin, where the source and drain regions have diamond-shaped cross sections and are separated from one another by a channel region in the semiconductor fin;
• forming a capping layer that surrounds top and bottom surfaces of the diamond-shaped cross-sections of the source and drain regions;
• performing a first etch to remove at least a first portion of the capping layer from the top surfaces of the diamond-shaped cross-section;
• forming a protective layer over the top surfaces of the diamond-shaped cross-section;
• performing a second etch to remove a second portion of the capping layer from the bottom surfaces of the diamond-shaped cross-section, while using the protective layer to limit etching of the top surfaces of the diamond-shaped cross-section by the second etch;
• and
• forming a source or drain contact that conformally surrounds the to and bottom surfaces of the diamond-shaped cross-section.

A method, comprising:

• forming a fin that extends vertically from a surface of a substrate and comprises source and drain regions which are separated from one another by a channel region, wherein the source or drain region comprises epitaxial material with a diamond-shaped cross-section, and wherein a capping layer surrounds the diamond-shaped cross-section on its top and bottom surfaces;
• forming a gate over an upper surface of the channel region and along sidewalls of the channel region;
• performing a first etch to remove a first portion of the capping layer surrounding the top surfaces of the diamond-shaped cross-section;
• and
• forming a protective layer configured to prevent etching of the top surfaces in subsequent etch steps;
• and
• performing a second etch to remove a second portion of the capping layer surrounding the bottom surfaces of the diamond-shaped cross-section, while using the protective layer to prevent etching of the top surfaces of the diamond-shaped cross-section by the second etch.