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US 9,425,305 B2Granted
Structures of and methods of fabricating split gate MIS devices
AssigneeVishay-Siliconix
InventorsKyle Terrill, Yang Gao, Chanho Park
Life of this patent
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Abstract
A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent.
Claims12
A split gate field effect transistor device, comprising:
- a split gate structure having a trench, a gate electrode and a source electrode;
- a first poly layer disposed within the trench connected to the source electrode;
- a source contact connecting the first poly layer;
- a second poly layer connected to the gate electrode;
- and
- a gate contact connecting the second poly layer, wherein a top portion of an oxide within said trench, a surface of an active region, the source contact and the gate contact are coplanar.
3 more elements
A CMP compatible split gate field effect transistor device, comprising:
- a split gate structure having a trench, a gate electrode and a source electrode;
- a source contact coupled to the source electrode;
- a first poly layer disposed within the trench coupled to the source electrode;
- a second poly layer disposed within the trench coupled to the gate electrode;
- a gate contact coupled to the second poly layer, wherein the first poly layer and the second poly layer are independent, and wherein a top portion of an oxide within said trench, a surface of an active region, the source contact and the gate contact are coplanar;
- and
- a metal layer disposed over the split gate structure.
4 more elements
A planar split gate field effect transistor device, comprising:
- a split gate structure having a trench, a gate electrode and a source electrode;
- a first poly layer disposed within the trench and connected to the source electrode;
- a source contact connecting the first poly layer;
- a second poly layer is disposed within the trench and connected to the gate electrode by a gate contact, wherein the first poly layer and the second poly layer are independent, and wherein the first poly layer and the second poly layer are both disposed within the trench substantially in their entirety, and wherein a top portion of an oxide within said trench a surface of an active region, the source contact and the gate contact are coplanar.
1 more element
Dependencies are inferred from the claim text.