Semiconductor device

A semiconductor device comprising:

• a substrate;
• a semiconductor stacked body including a first nitride semiconductor layer formed on the substrate, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer;
• a source electrode portion and a drain electrode formed at an interval from each other and above a lower surface of the semiconductor stacked body;
• and
• a gate electrode formed between the source electrode portion and the drain electrode at an interval from the source electrode portion and the drain electrode, wherein
• the source electrode portion includes:
• a first recess electrode formed so as to be directly in contact with a two-dimensional electron gas layer formed in the first nitride semiconductor layer, and
• a surface electrode formed between the gate electrode and the first recess electrode so as to be directly in contact with an upper surface of the second nitride semiconductor layer, and formed so as to be connected conductively to the two-dimensional electron gas layer through the second nitride semiconductor layer,
• the surface electrode and the first recess electrode have potentials substantially equal to a source potential, and
• a width of the surface electrode in a gate-source direction is 0.4 times or more a distance between a gate-side end of the surface electrode and a source-side end of the gate electrode.