Formation of high quality fin in 3D structure by way of two-step implantation

A method, comprising:

• forming a fin structure over a substrate, the fin structure containing a semiconductor material;
• forming a seed inside the fin structure with a first implantation process, wherein the seed has a crystal structure, and wherein the first implantation process is performed at a first process temperature;
• forming amorphous regions inside the fin structure but outside the seed with a second implantation process, wherein the second implantation process is performed at a second process temperature, and wherein the second process temperature is at least 100 degrees Celsius colder than the first process temperature;
• and
• recrystallizing the amorphous regions via the seed by performing an annealing process.

A method, comprising:

• forming a fin structure over a substrate, the fin structure containing a semiconductor material;
• forming a gate structure that wraps around a first portion of the fin structure;
• forming a seed within a second portion of the fin structure that is different from the first portion, wherein the seed contains a crystal material and is formed using a hot implantation process;
• forming a globally amorphous region within the second portion of the fin structure outside the seed, wherein the globally amorphous region is formed using a cold implantation process that is colder than the hot implantation process by at least 100 degrees Celsius;
• and
• recrystallizing the globally amorphous region via the seed by performing a spike annealing process.