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US 9,425,286 B2Granted
Source/drain stressor having enhanced carrier mobility and method for manufacturing same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Hsiang Lin, Jeff J. Xu, Pang-Yen Tsai
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Abstract
Various source/drain stressors that can enhance carrier mobility, and methods for manufacturing the same, are disclosed. An exemplary source/drain stressor includes a seed layer of a first material disposed over a substrate of a second material, the first material being different than the second material; a relaxed epitaxial layer disposed over the seed layer; and an epitaxial layer disposed over the relaxed epitaxial layer.
Claims20
A method comprising:
- providing a substrate;
- forming a trench in the substrate;
- forming a silicon carbon layer over the substrate in the trench;
- forming a relaxed silicon germanium epitaxial layer over the silicon carbon layer in the trench;
- and
- forming a silicon-containing epitaxial layer over the relaxed silicon germanium epitaxial layer in the trench.
3 more elements
A method comprising:
- providing a substrate;
- forming a trench in the substrate;
- forming a first layer from the group consisting of a silicon carbon layer and a carbon coherence breaking layer over the substrate in the trench;
- forming a relaxed silicon germanium epitaxial layer over the first-layer in the trench;
- and
- forming a silicon-containing epitaxial layer over the relaxed silicon germanium epitaxial layer in the trench.
3 more elements
Dependencies are inferred from the claim text.