Fabricating method of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Yu Chiang, Kuang-Hsin Chen
Life of this patent
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Abstract
A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate, a gate structure over the substrate, a source/drain regions adjacent to the pair of spacers in the substrate, an etch stop layer next to the gate structure and overlying the substrate, a contact plug extending into the source/drain region and partially overlapping the gate structure, a protective layer over the etch stop layer overlying the substrate and covering the etch stop layer next to the gate structure without the contact plug, and an interlayer dielectric layer over the protective layer. The contact plug has no contact-to-gate short issue to the gate structure.
Claims20
A method of fabricating semiconductor device comprising:
- forming a gate structure with a dummy gate electrode and a source/drain regions adjacent to the dummy gate structure over a substrate;
- depositing an etch stop layer over the substrate;
- depositing a protective layer over the etch stop layer;
- depositing an interlayer dielectric layer over the etch stop layer;
- polishing and annealing the interlayer dielectric layer;
- forming a metal gate structure by replacing part of the dummy gate structure;
- depositing an isolation layer over the metal gate structure;
- forming a contact opening through the interlayer dielectric layer to the source/drain regions and the isolation layer;
- and
- forming a contact plug in the contact opening.
A method of fabricating semiconductor device comprising:
- forming a dummy gate structure with a dummy gate electrode and source/drain regions adjacent to the dummy gate structure over a substrate;
- depositing an etch stop layer over the dummy gate structure;
- depositing a protective layer over the etch stop layer;
- depositing an interlayer dielectric layer over the etch stop layer;
- polishing the etch stop layer to expose the dummy gate structure;
- forming a metal gate electrode by replacing part of the dummy gate structure;
- depositing an isolation layer over the metal gate electrode;
- forming a contact opening through the interlayer dielectric layer to expose the source/drain regions;
- and
- forming a contact plug in the contact opening.
A method of fabricating semiconductor device comprising:
- forming a dummy gate structure with a dummy gate electrode and source/drain regions adjacent to the dummy gate structure over a substrate;
- depositing an etch stop layer over the source/drain regions;
- depositing a protective layer over the etch stop layer;
- depositing an interlayer dielectric layer over the protective layer;
- forming a metal gate electrode by replacing part of the dummy gate structure;
- depositing an isolation layer over the metal gate electrode;
- forming a contact opening through the interlayer dielectric layer to expose the source/drain regions;
- and
- forming a contact plug in the contact opening.
Dependencies are inferred from the claim text.