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US 9,425,284 B2Granted
Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
AssigneeSony Corporation
InventorYasushi Tateshita
Life of this patent
Estimating the term…
Abstract
A semiconductor device in which sufficient stress can be applied to a channel region due to lattice constant differences.
Claims29
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film comprising metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate, each of the metal oxide, the metal silicate, the metal oxynitride, and the nitrided metal silicate comprising at least one metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum;
- as viewed in a cross section, a sidewall film on both of oppositely facing sides of the gate electrode,
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- mixed crystal layers in recess regions of a surface of the silicon substrate, the recess regions being at both sides of the gate electrode, the mixed crystal layer having a lattice constant different from a lattice constant of silicon;
- as viewed in the cross section, an insulating film, on both of the oppositely facing sides of the gate electrode, the insulating film not on the gate electrode;
- and
- a work function control film between the gate insulating film and the gate electrode.
6 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film comprising metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate, each of the metal oxide, the metal silicate, the metal oxynitride, and the nitrided metal silicate comprising at least one metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum;
- as viewed in a cross section, a sidewall film on both of oppositely facing sides of the gate electrode,
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- mixed crystal layers in recess regions of a surface of the silicon substrate, the recess regions being at both sides of the gate electrode, the mixed crystal layer having a lattice constant different from a lattice constant of silicon;
- as viewed in the cross section, an insulating film, on both of the oppositely facing sides of the gate electrode, the insulating film not on the gate electrode;
- and
- a cap film between the gate insulating film and the gate electrode.
6 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film comprising metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate, each of the metal oxide, the metal silicate, the metal oxynitride, and the nitrided metal silicate comprising at least one metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum;
- as viewed in a cross section, a sidewall film on both of oppositely facing sides of the gate electrode,
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- mixed crystal layers in recess regions of a surface of the silicon substrate, the recess regions being at both sides of the gate electrode, the mixed crystal layer having a lattice constant different from a lattice constant of silicon;
- as viewed in the cross section, an insulating film, on both of the oppositely facing sides of the gate electrode, the insulating film not on the gate electrode;
- and
- a TiN film on the gate insulating film.
6 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate electrode over the silicon substrate;
- a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film comprising metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate, each of the metal oxide, the metal silicate, the metal oxynitride, and the nitrided metal silicate comprising at least one metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum;
- as viewed in a cross section, a sidewall film on both of oppositely facing sides of the gate electrode,
- as viewed in the cross section, an offset spacer between the sidewall film and the gate electrode;
- mixed crystal layers in recess regions of a surface of the silicon substrate, the recess regions being at both sides of the gate electrode, the mixed crystal layer having a lattice constant different from a lattice constant of silicon;
- as viewed in the cross section, an insulating film, on both of the oppositely facing sides of the gate electrode, the insulating film not on the gate electrode;
- and
- an adhesion layer between the gate electrode and the gate insulating film.
6 more elements
Dependencies are inferred from the claim text.