Method for forming semiconductor device including spacers having different dimensions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Liang Liao, Chih-Hsiao Chen, Yi-Lii Huang, Yao-Yu Li
Life of this patent
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Abstract
The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a dummy gate over a substrate;
- forming a first spacer over sidewalls of the dummy gate and having a first height;
- forming a second spacer over the sidewalls of the dummy gate and having a second height, wherein the first spacer is farther from the sidewalls of the dummy gate than the second spacer and the second height is lower than the first height;
- forming a third spacer between the first spacer and the second spacer;
- removing the dummy gate electrode to form an opening;
- removing a portion of the first spacer to form a recess;
- and
- forming a metal gate to fill in the opening and the recess, and cover the first spacer and the second spacer.
A method for forming a semiconductor device structure, comprising:
- forming a dielectric layer having an opening over a substrate;
- forming a first spacer over sidewalls of the opening and having a first height;
- forming a second spacer over the sidewalls of the first spacer and having a second height, wherein the first spacer is farther from a center of the opening than the second spacer, and the second height is lower than the first height;
- forming a third spacer between the first spacer and the second spacer, wherein the third spacer has a top surface higher than top surfaces of the first spacer and the second spacer;
- forming a recess over the first spacer and between the dielectric layer and the third spacer;
- and
- filling a conductive material into the opening and the recess.
A method for forming a semiconductor device structure, comprising:
- forming a metal gate over a substrate;
- forming a first spacer over sidewalls of the metal gate and having a first height;
- forming a second spacer over the sidewalls of the metal gate and having a second height, wherein the first spacer is farther from the sidewalls of the metal gate than the second spacer, and the first height is higher than the second height;
- forming a source/drain region on two opposite sides of the metal gate;
- forming a third spacer between the first spacer and the second spacer;
- and
- forming a dielectric layer over the substrate to surround the first spacer and the metal gate;
- and
- forming a first recess over the first spacer and between the dielectric layer and the third spacer, wherein a portion of the metal gate is in the first recess.
Dependencies are inferred from the claim text.