Replacement emitter for reduced contact resistance
AssigneeGlobalfoundries Inc.
InventorsJames W. Adkisson, Jeffrey P. Gambino, Anthony K. Stamper
Life of this patent
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Abstract
Device structures for a bipolar junction transistor and methods for fabricating such device structures. An emitter structure is formed that has a semiconductor layer with a top surface defining a recess and a sacrificial layer comprised of a disposable material in the recess. A contact opening is formed that extends through one or more first dielectric layers to the sacrificial layer. After the contact opening is formed, the sacrificial layer is removed from the recess. Alternatively, the layer in the recess may be comprised of a non-disposable material that may occupy the recess at the time that a contact is formed in the contact opening.
Claims16
A method for fabricating a device structure, the method comprising:
- forming an emitter structure having a semiconductor layer with a top surface defining a recess and a sacrificial layer comprised of a disposable material in the recess;
- forming a first contact opening extending through one or more first dielectric layers to the sacrificial layer;
- and
- after the first contact opening is formed, removing the sacrificial layer from the recess.
A method for fabricating a device structure, the method comprising:
- forming an emitter structure having a semiconductor layer with a top surface defining a recess and a conductor layer in the recess;
- forming a first contact opening extending through one or more first dielectric layers to the semiconductor layer and the conductor layer;
- and
- after the first contact opening is formed, forming a contact in the first contact opening to contact the semiconductor layer and the conductor layer.
Dependencies are inferred from the claim text.