Integrated floating diode structure and method therefor

A semiconductor diode structure comprising:

• a semiconductor substrate of a first conductivity type;
• a first doped region of a second conductivity type opposite to the first conductivity type, the first doped region having a first portion adjacent the semiconductor substrate and having a first doping concentration and a second portion adjacent the first portion and having a second doping concentration greater than the first doping concentration;
• a second doped region of the first conductivity type adjacent the second portion of the first doped region;
• a cathode region of the second conductivity type within the second doped region;
• an anode region of the first conductivity type within the cathode region, wherein the cathode region and anode region form the semiconductor diode;
• a first electrode electrically coupled to the anode region;
• and
• a second electrode electrically coupled to the cathode region, wherein the first doped region is configured to operate absent a low-ohmic external voltage imposed on the first doped region, and wherein the second doping concentration is selected to reduce current injection from the semiconductor diode into the semiconductor substrate.

A method of forming a semiconductor device comprising:

• providing a semiconductor substrate of a first conductivity type, a first doped region of a second conductivity type opposite to the first conductivity type on the semiconductor substrate, and a second doped region of the first conductivity type adjacent the first doped region;
• forming a cathode region of the second conductivity type within the second doped region;
• forming an anode region of the first conductivity type within the cathode region;
• forming a first electrode coupled to the anode region;
• and
• forming a second electrode coupled to the cathode region and the second doped region, wherein the first doped region is configured as a floating region.