Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure

A semiconductor die, comprising:

• a semiconductor device;
• and
• an edge termination structure in an edge termination region around a periphery of the semiconductor device, the edge termination structure approximating a desired dose profile from an edge of a main junction of the semiconductor device to an edge of the edge termination region and comprising:
• one or more negative steps that define at least two concentric starting zones within the edge termination region;
• and
• for each zone of the at least two concentric starting zones, at least two negative features in the zone that vary dose within the zone according to the desired dose profile, wherein, for at least one zone of the at least two concentric starting zones, the at least two negative features in the at least one zone comprise at least two trenches having increasing widths to thereby provide a decreasing dose moving laterally away from the edge of the main junction of the semiconductor device toward the edge of the edge termination region.

A semiconductor die, comprising:

• a semiconductor device;
• and
• an edge termination structure in an edge termination region around a periphery of the semiconductor device, the edge termination structure approximating a desired dose profile from an edge of a main junction of the semiconductor device to an edge of the edge termination region and comprising:
• one or more negative steps that define at least two concentric starting zones within the edge termination region;
• and
• for each zone of the at least two concentric starting zones, at least two negative features in the zone that vary dose within the zone according to the desired dose profile, wherein, for at least one zone of the at least two concentric starting zones, the at least two negative features in the at least one zone comprise at least two divot rings having increasing widths to thereby provide a decreasing dose moving laterally away from the edge of the main junction of the semiconductor device toward the edge of the edge termination region.

A method comprising:

• forming a semiconductor device in a semiconductor die area of a semiconductor wafer;
• and
• forming an edge termination structure around a periphery of the semiconductor device in an edge termination region within the semiconductor die area such that the edge termination structure approximates a desired dose profile from an edge of a main junction of the semiconductor device to an edge of the edge termination region;
• wherein forming the edge termination structure comprises:
• providing one or more negative steps in the edge termination region that define at least two concentric starting zones within the edge termination region;
• and
• for each zone of the at least two concentric starting zones, providing at least two negative features in the zone that vary dose within the zone according to the desired dose profile wherein, for at least one zone of the at least two concentric starting zones, the at least two negative features in the at least one zone comprise at least two trenches having increasing widths to thereby provide a decreasing dose moving laterally away from the edge of the main junction of the semiconductor device toward the edge of the edge termination region.