Method for growing an epitaxial film on a phosphorous-doped silicon wafer

A manufacturing method of an epitaxial silicon wafer provided by forming an epitaxial film on a surface of a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm, the method comprising:

• forming an oxidation film on a backside of a silicon wafer cut out from a single crystal ingot prepared by a Czochralski process;
• removing the oxidation film present at an outer periphery of the silicon wafer;
• argon annealing in which a heat treatment is applied on the silicon wafer after removing the oxidation film in a gas atmosphere consisting of argon at a temperature in a range from 1200 to 1220 degrees C.;
• applying a heat treatment under a hydrogen gas atmosphere on the silicon wafer after being subjected to the argon annealing;
• and
• growing the epitaxial film on the surface of the silicon wafer after applying the heat treatment under the hydrogen gas atmosphere.