Configuration of portions of a power device within a silicon carbide crystal
AssigneeFairchild Semiconductor Corporation
InventorAndrei Konstantinov
Life of this patent
Estimating the term…
Abstract
In one general aspect, an apparatus can include a silicon carbide (SiC) crystal having a top surface aligned along a plane and the SiC crystal having an off-orientation direction. The apparatus including a semiconductor device defined within the SiC crystal. The semiconductor device having an outer perimeter where the outer perimeter has a first side aligned along the off-orientation direction and a second side aligned along a direction non-parallel to the off-orientation direction. The first side of the outer perimeter of the semiconductor device having a length longer than the second side of the outer perimeter of the semiconductor device.
Claims20
An apparatus for a silicon carbide (SiC) crystal semiconductor device, comprising:
- a silicon carbide (SiC) crystal having a top surface aligned along a plane, the SiC crystal having an off-orientation direction from a basal (0001) plane;
- and
- a semiconductor device having at least a portion defined within the SiC crystal, the semiconductor device being a vertically oriented device, the semiconductor device having an outer perimeter, the outer perimeter having a first side aligned along the off-orientation direction and a second side aligned along a direction non-parallel to the off-orientation direction, the first side of the outer perimeter of the semiconductor device having a length longer than the second side of the outer perimeter of the semiconductor device.
An apparatus for a silicon carbide (SiC) crystal semiconductor device, comprising:
- a first portion of a semiconductor device having at least a portion defined within a silicon carbide crystal and having a length greater than a width, the length of the first portion of the semiconductor device being aligned along an off-orientation direction from the basal (0001) plane of the silicon carbide crystal, the semiconductor device being a vertical device;
- a second portion of a semiconductor device having a length greater than a width, the length of the second portion of the semiconductor device being aligned parallel to the first portion of the semiconductor device;
- and
- a termination region disposed at least partially around the first portion of the semiconductor device and at least partially around the second portion of the semiconductor device.
An apparatus for a silicon carbide (SiC) crystal semiconductor device, comprising:
- a first portion of a semiconductor device having at least a portion defined within an epitaxial layer of a silicon carbide crystal and having a length greater than a width, the length of the first portion of the semiconductor device being aligned along an off-orientation direction from a basal plane of the silicon carbide crystal, the semiconductor device being a vertically-oriented device;
- a second portion of a semiconductor device having a length greater than a width, the length of the second portion of the semiconductor device being aligned parallel to the first portion of the semiconductor device;
- and
- a stacking fault separation region disposed between the first portion and the second portion, the stacking fault separation region having a width equal to or greater than a thickness of the epitaxial layer.
Dependencies are inferred from the claim text.