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US 9,425,258 B2Granted
Semiconductor device
AssigneeNXP B.V.
InventorsMarkus Mueller, Anco Heringa
Life of this patent
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Abstract
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.
Claims20
A semiconductor device comprising:
- a semiconductor substrate including an AlGaN layer on a GaN layer;
- a source;
- a drain;
- and
- a gate, which together define a source-gate side and a drain-gate side;
- wherein the average thickness of the AlGaN layer varies between the source and the drain, for modulating the density of an electron gas in the GaN layer between the source and the drain;
- wherein at least part of an upper surface of the AlGaN layer includes grooves in a grid that defines a grid pattern;
- wherein the AlGaN layer has a larger average thickness between the source and the gate than between the gate and the drain.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate including an AlGaN layer on a GaN layer;
- a source;
- a drain;
- and
- a gate, which together define a source-gate side and a drain-gate side;
- wherein the average thickness of the AlGaN layer varies between the source and the drain, for modulating the density of an electron gas in the GaN layer between the source and the drain;
- wherein at least part of an upper surface of the AlGaN layer includes grooves in a grid that defines a grid pattern;
- wherein the average thickness of the AlGaN layer increases from the gate to the drain.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate including an AlGaN layer on a GaN layer;
- a source;
- a drain;
- and
- a gate, which together define a source-gate side and a drain-gate side;
- wherein the average thickness of the AlGaN layer varies between the source and the drain, for modulating the density of an electron gas in the GaN layer between the source and the drain;
- wherein at least part of an upper surface of the AlGaN layer includes grooves in a grid that defines a grid pattern;
- wherein the grid pattern of grooves is adjacent to the gate and an area of the upper surface of the AlGaN layer adjacent to the drain is free from grooves.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate including an AlGaN layer on a GaN layer;
- a first contact;
- and
- a second contact;
- wherein the average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact;
- wherein at least part of an upper surface of the AlGaN layer includes grooves in a grid that defines a grid pattern;
- wherein the average thickness of the AlGaN layer increases from the first contact to the second contact.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate including an AlGaN layer on a GaN layer;
- a first contact;
- and
- a second contact;
- wherein the average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact;
- wherein at least part of an upper surface of the AlGaN layer includes grooves in a grid that defines a grid pattern;
- wherein the grid pattern of grooves is adjacent to the first contact and an area of the upper surface of the AlGaN layer adjacent to the second contact is free from grooves.
4 more elements
Dependencies are inferred from the claim text.