Strain inducing semiconductor regions
AssigneeIntel Corporation
InventorsSuman Datta, Jack T. Kavalieros, Been-Yih Jin
Life of this patent
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Abstract
A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate.
Claims9
A semiconductor device, comprising:
- a crystalline substrate;
- and
- a transistor disposed above the substrate, the transistor comprising:
- a channel region comprising a SixGe1-x material, the channel region having a top surface and a pair of laterally opposing sidewalls;
- a gate dielectric layer formed on the top surface of the channel region and adjacent the pair of sidewalls of the channel region;
- a gate electrode formed on the gate dielectric layer;
- a pair of gate isolation spacers formed adjacent to the gate electrode;
- an epitaxially-grown source region disposed laterally and directly adjacent to a first end of the channel region, the source region having a top surface and a pair of laterally opposing sidewall surfaces;
- and
- an epitaxially-grown drain region disposed laterally and directly adjacent to a second end of the channel region, the drain region having a top surface and a pair of laterally opposing sidewall surfaces,
- wherein the source and drain regions comprise a SiyGe1-y material directly adjacent to the channel region comprising the SixGe1-x material, 0<x<1, and y<x.
Dependencies are inferred from the claim text.