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US 9,425,250 B2Granted
Transistor with wurtzite channel
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsHung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu, Samuel C. Pan
Life of this patent
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Abstract
A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [−2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.
Claims20
A device comprising:
- a source region;
- a drain region;
- a wurtzite semiconductor between the source region and the drain region, wherein a source-drain direction is parallel to a [01-10] direction or a [−2110] direction of the wurtzite semiconductor;
- a gate dielectric over the wurtzite semiconductor;
- and
- a gate electrode over the gate dielectric.
3 more elements
A device comprising:
- a substrate;
- a channel region over the substrate, with the channel region formed of a wurtzite semiconductor comprising silicon or germanium;
- a source region;
- a drain region, wherein a source-drain direction interconnecting the source region and the drain region is parallel to a [01-10] direction or a [−2110] direction of the wurtzite semiconductor;
- a gate dielectric comprising a portion overlapping the channel region;
- and
- a gate electrode over the gate dielectric.
4 more elements
A device comprising:
- a substrate;
- dielectric regions over the substrate;
- a wurtzite semiconductor strip over the substrate and between opposite portions of the dielectric regions, wherein a top portion of the wurtzite semiconductor strip protrudes over top surfaces of the dielectric regions to form a wurtzite semiconductor fin, and a lengthwise direction of the wurtzite semiconductor strip is parallel to a [01-10] direction or a [−2110] direction of the wurtzite semiconductor strip;
- a gate dielectric over a top surface and on sidewalls of the wurtzite semiconductor fin;
- and
- a gate electrode over the gate dielectric.
3 more elements
Dependencies are inferred from the claim text.