Back to results
US 9,425,240 B2Granted
Image sensors with organic photodiodes and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Wei Liang, Hsing-Lien Lin, Cheng-Yuan Tsai, Chia-Shiung Tsai
Life of this patent
Estimating the term…
Abstract
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.
Claims19
A photodiode, comprising:
- a first electrode layer;
- an N-type layer, wherein the N-type layer defines a plurality of trenches, wherein the plurality of trenches comprises:
- first trenches having respective first lengths disposed in a first direction in a top-down view of the photodiode;
- and
- second trenches disposed across the first trenches and having respective second lengths disposed in a second direction substantially perpendicular to the first direction in the top-down view of the photodiode;
- an electron transport layer between the first electrode layer and the N-type layer;
- an organic P-type layer over the N-type layer, wherein the organic P-type layer fills the plurality of trenches;
- and
- a second electrode layer over the organic P-type layer.
6 more elements
A photodiode, comprising:
- a first electrode layer;
- a first plurality of trenches extending into the first electrode layer;
- an N-type layer, wherein the N-type layer extends along sidewalls and over a bottom surface of the first plurality of trenches;
- an organic P-type layer over the N-type layer, wherein the organic P-type layer fills remaining portions of the first plurality of trenches;
- and
- a second electrode layer over the organic P-type layer.
3 more elements
A front-side image sensor, comprising:
- an organic photodiode comprising an N-type layer defining a plurality of trenches and an organic P-type layer filling the plurality of trenches, wherein the N-type layer comprises:
- a first surface forming an interface with the organic P-type layer;
- and
- a non-planar second surface opposite the first surface;
- a substrate with devices and interconnect structures, wherein the organic photodiode is over the interconnect structures;
- a color filter layer over the organic photodiode;
- and a micro-lens over the color filter layer.
4 more elements
Dependencies are inferred from the claim text.