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US 9,425,238 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorJae-Yun Yi
Life of this patent
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Abstract
A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a gate insulating layer in the transistor region.
Claims11
A method for fabricating a semiconductor device, comprising:
- forming an interlayer dielectric defining a transistor region and a memory region;
- forming a plurality of gate electrodes on the interlayer dielectric in the transistor region and forming a plurality of first conductive lines on the interlayer dielectric in the memory region;
- forming a first insulating layer on the interlayer dielectric;
- forming a second insulating layer on the first insulating layer;
- and
- forming a first electrode and a second electrode on the second insulating layer in the transistor region to overlap a portion of the gate electrode and forming a plurality of second conductive lines crossing over the first conductive lines in the memory region.
3 more elements
The method of 3, further comprising:
- dividing the first insulating layer of the transistor region and the first insulating layer of the memory region by selectively etching the first insulating layer, after the forming of the second insulating layer.
A method for fabricating a semiconductor device, comprising:
- forming a variable resistance layer in a memory region of a memory block;
- and
- forming a gate insulating layer in a transistor region of the memory block,
- wherein the variable resistance layer and the gate insulating layer are simultaneously formed, and
- wherein the memory region comprises:
- a plurality of first conductive lines disposed on an interlayer dielectric and under the variable resistance layer;
- and
- a plurality of second conductive lines disposed on the variable resistance layer and crossing over the first conductive lines.
5 more elements
Dependencies are inferred from the claim text.