Solid-state imaging device and manufacturing method of the same, and electronic apparatus
AssigneeSony Corporation
InventorsYuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
Life of this patent
Estimating the term…
Abstract
There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
Claims20
A solid-state imaging device comprising:
- an imaging pixel including a photoelectric conversion unit that receives incident light;
- and
- a phase difference detection pixel including a photoelectric conversion unit and a light shielding unit that shields the photoelectric conversion unit of phase difference detection pixel from some light incident on the phase difference detection pixel,
- wherein the imaging pixel further includes a high refractive index film that is formed on an upper side of the photoelectric conversion unit of the imaging pixel,
- wherein the phase difference detection pixel further includes a low refractive index film that is formed on an upper side of the photoelectric conversion unit of the phase difference detection pixel, and
- wherein the imaging pixel and the phase difference detection pixel include color filter layers that are respectively formed adjacent upper layers of the high refractive index film and the low refractive index film.
A manufacturing method of a solid-state imaging device that includes an imaging pixel including a photoelectric conversion unit that receives incident light, and a phase difference detection pixel including a photoelectric conversion unit and a light shielding unit that shields the photoelectric conversion unit of the phase difference detection pixel from some light incident on the phase difference detection pixel, the method comprising:
- forming a high refractive index film on an upper side of the photoelectric conversion unit in the imaging pixel;
- and
- forming a low refractive index film on an upper side of the photoelectric conversion unit in the phase difference detection pixel, wherein the imaging pixel and the phase difference detection pixel include color filter layers that are respectively formed adjacent upper layers of the high refractive index film and the low refractive index film.
An electronic apparatus comprising:
- a solid-state imaging device including:
- an imaging pixel including a photoelectric conversion unit that receives incident light;
- and
- a phase difference detection pixel including a photoelectric conversion unit and a light shielding unit that shields the photoelectric conversion unit of phase difference detection pixel from some light incident on the phase difference detection pixel,
- wherein the imaging pixel further includes a high refractive index film that is formed on an upper side of the photoelectric conversion unit of the imaging pixel,
- wherein the phase difference detection pixel further includes a low refractive index film that is formed on an upper side of the photoelectric conversion unit of the phase difference detection pixel, and
- wherein the imaging pixel and the phase difference detection pixel include color filter layers that are respectively formed on upper layers of the high refractive index film and the low refractive index film.
Dependencies are inferred from the claim text.