Semiconductor device

A semiconductor device comprising:

• a signal line;
• a first scan line;
• a second scan line;
• a first transistor comprising a source, a drain, and a gate;
• a second transistor comprising a source, a drain, and a gate;
• a pixel electrode;
• and
• a capacitor comprising an electrode and the pixel electrode over the electrode,
• wherein one of the source and the drain of the first transistor is electrically connected to the pixel electrode,
• wherein the first scan line is electrically connected to the gate of the first transistor,
• wherein the signal line is electrically connected to the other of the source and the drain of the first transistor and one of the source and the drain of the second transistor,
• wherein the second scan line is directly connected to the gate of the second transistor,
• wherein the electrode of the capacitor comprises an oxide film comprising indium and zinc,
• wherein a first insulating film is provided over the first scan line and the second scan line,
• wherein the source and the drain of the first transistor are over the first insulating film,
• wherein the first insulating film comprises an opening, and
• wherein the electrode of the capacitor is in direct contact with the second scan line in the opening of the first insulating film.