Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same
AssigneeSamsung Display Co., Ltd.
InventorsYoung Sik Yoon, Youn Joon Kim, Seung Peom Noh, Sang Jo Lee, Ji Won Han
Life of this patent
Estimating the term…
Abstract
A thin film transistor substrate includes: a polymer substrate, an oxide transparent electrode layer (TCO) formed on the polymer substrate, a barrier layer formed on the oxide transparent electrode layer, and a semiconductor layer formed on the barrier layer, in which the semiconductor layer is polysilicon. The polysilicon thin film transistor provides an oxide transparent electrode layer (TCO) which absorbs heat energy and light generated during a process of manufacturing the polysilicon thin film transistor to prevent a damage of the substrate using a polymer material.
Claims14
A thin film transistor substrate comprising:
- a polymer substrate;
- an oxide transparent electrode layer (TCO) disposed between an entire surface of the polymer substrate and at least one barrier layer;
- and
- a semiconductor layer disposed on the at least one barrier layer,
- wherein the semiconductor layer comprises polysilicon,
- wherein the oxide transparent electrode layer (TCO) overlaps with the semiconductor layer.
An organic light emitting diode display comprising:
- a polymer substrate;
- an oxide transparent electrode layer (TCO) disposed between an entire surface of the polymer substrate and a thin film transistor;
- a passivation layer disposed on the thin film transistor;
- a first electrode disposed on the passivation layer;
- an intermediate layer disposed on the first electrode;
- and
- a second electrode disposed on the intermediate layer
- wherein the oxide transparent electrode layer (TCO) overlaps with the semiconductor layer.
Dependencies are inferred from the claim text.