Isolated and bulk semiconductor devices formed on a same bulk substrate

A semiconductor structure, comprising:

• a first semiconductor device comprising a first semiconductor body disposed on and electrically connected to a bulk semiconductor substrate, the first semiconductor body having an uppermost surface with a first horizontal plane;
• a second semiconductor device comprising a second semiconductor body disposed on an isolation pedestal disposed on and electrically isolating the second semiconductor body from the bulk semiconductor substrate, the second semiconductor body having an uppermost surface with a second horizontal plane, wherein the first and second horizontal planes are co-planar;
• and
• a dielectric layer disposed on the bulk semiconductor substrate and having an uppermost surface below an uppermost surface of the isolation pedestal, wherein the dielectric layer is laterally adjacent to and in contact with the isolation pedestal, and wherein the bulk semiconductor substrate is a bulk single crystalline silicon substrate, the isolation pedestal comprises silicon dioxide, and the dielectric layer comprises silicon oxy-nitride or silicon nitride.