Double-source semiconductor device
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Ji Yeon Baek
Life of this patent
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Abstract
A semiconductor device may include a first source layer, a first insulating layer located over the first source layer, and a first stacked structure located over the first insulating layer. The semiconductor device may include first channel layers passing through the first stacked structure and the first insulating layer. The semiconductor device may include a second source layer including a first region interposed between the first source layer and the first insulating layer and second regions interposed between the first channel layers and the first insulating layer, wherein the second regions of the second source layer directly contact each other.
Claims20
A semiconductor device, comprising:
- a first source layer;
- a first insulating layer located over the first source layer;
- a first stacked structure located over the first insulating layer;
- first channel layers passing through the first stacked structure and the first insulating layer;
- and
- a second source layer including a first region interposed between the first source layer and the first insulating layer and second regions interposed between the first channel layers and the first insulating layer, wherein the second regions of the second source layer directly contact each other.
A semiconductor device, comprising:
- a source layer including at least one groove on an upper surface;
- a stacked structure located over the source layer;
- first channel layers passing through the stacked structure and the source layer;
- and
- at least one void located between the source layer and the stacked structure.
A semiconductor device, comprising:
- a first source layer;
- a first insulating layer located over the first source layer;
- a first stacked structure located over the first insulating layer;
- first channel layers passing through the first stacked structure and the first insulating layer;
- second source layers interposed between the first channel layers and the first insulating layer;
- and
- at least one void located between the second source layers and included in the first insulating layer.
Dependencies are inferred from the claim text.