Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorYasuhiro Shimura
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Abstract
According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; and a charge storage film. The stacked body includes a plurality of electrode layers crosswise extending in a first direction and second direction crossing the first direction, the plurality of electrode layers separately stacked each other in a third direction crossing the first direction and second direction. The semiconductor body extends in the third direction and provided in the stacked body. The charge storage film is provided between the semiconductor body and the plurality of electrode layers.
Claims16
A semiconductor memory device comprising:
- a stacked body including a plurality of electrode layers crosswise extending in a first direction and second direction crossing the first direction, the plurality of electrode layers separately stacked from each other in a third direction crossing the first direction and second direction, the plurality of electrode layers being separated from each other in the first direction by separating sections extending in the third direction, and being connected to each other by intermediate sections extending in the first and second directions;
- a semiconductor body extending in the third direction and provided in the stacked body;
- and
- a charge storage film provided between the semiconductor body and the plurality of electrode layers.
Dependencies are inferred from the claim text.