Field effect transistor and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYasuhiko Takemura
Life of this patent
Estimating the term…
Abstract
A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating electrode (102) including a conductor or a semiconductor and being enclosed by an insulator (104) is formed between a semiconductor layer (101) and a gate (105) so as to cross the semiconductor layer (101) and the floating electrode (102) is charged, whereby carriers are prevented from flowing from a source electrode (103a) or a drain electrode (103b). Accordingly, a sufficiently low carrier concentration can be kept in the semiconductor layer (101) and thus the zero current can be reduced.
Claims17
A method for manufacturing a semiconductor device, comprising:
- forming a semiconductor circuit comprising a first field effect transistor and a second field effect transistor, each of the first field effect transistor and the second field effect transistor comprising:
- a semiconductor;
- a first electrode and a second electrode in contact with the semiconductor;
- a gate;
- and
- a first region between the semiconductor and the gate;
- adding electric charge in the first region of each of the first field effect transistor and the second field effect transistor in order that characteristics of the first field effect transistor and the second field effect transistor be uniform;
- and
- covering the semiconductor circuit with a light-blocking material after the adding.
A method for manufacturing a semiconductor device, comprising:
- forming a first field effect transistor and a second field effect transistor, each of the first field effect transistor and the second field effect transistor comprising:
- a semiconductor;
- a first electrode and a second electrode in contact with the semiconductor;
- a gate;
- and
- a first region between the semiconductor and the gate;
- adding electric charge in the first region of each of the first field effect transistor and the second field effect transistor in order that characteristics of the first field effect transistor and the second field effect transistor be uniform;
- and
- covering the first field effect transistor and the second field effect transistor with a light-blocking material after the adding.
A method for manufacturing a semiconductor device, comprising:
- forming a first field effect transistor and a second field effect transistor, each of the first field effect transistor and the second field effect transistor comprising:
- a semiconductor;
- a gate;
- and
- a first region between the semiconductor and the gate;
- adding electric charge in the first region of each of the first field effect transistor and the second field effect transistor in order that characteristics of the first field effect transistor and the second field effect transistor be uniform;
- and
- covering the first field effect transistor and the second field effect transistor with a light-blocking material after the adding.
Dependencies are inferred from the claim text.