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US 9,425,197 B2Granted
Semiconductor device and manufacturing method for the same
AssigneeSeiko Epson Corporation
InventorsHiroaki Nitta, Hideyuki Akanuma, Kazunobu Kuwazawa
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Abstract
A semiconductor device includes a P-channel DMOS transistor provided with an N-type gate electrode, a P-channel MOS transistor provided with a P-type gate electrode, and an N-channel MOS transistor provided with an N-type gate electrode. The N-type gate electrode of the P-channel DMOS transistor desirably has a first end portion that is located on a source side of the P-channel DMOS transistor, a second end portion that is located on a drain side of the P-channel DMOS transistor, and a P-type diffusion layer at the first end portion.
Claims2
A semiconductor device comprising:
- a P-channel DMOS transistor provided with an N-type gate electrode;
- a P-channel MOS transistor provided with a P-type gate electrode;
- and
- an N-channel MOS transistor provided with an N-type gate electrode,
- wherein the N-type gate electrode of the P-channel DMOS transistor has a first end portion that is located on a source side of the P-channel DMOS transistor, a second end portion that is located on a drain side of the P-channel DMOS transistor, and a P-type diffusion layer at the first end portion.
2 more elements
Dependencies are inferred from the claim text.