Memory device and manufacturing method of the same
AssigneeMacronix International Co., Ltd.
InventorsYi-Hsuan Hsiao, Yen-Hao Shih, Shih-Hung Chen, Hang-Ting Lue
Life of this patent
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Abstract
A memory device and a manufacturing method of the same are provided. The memory device includes a substrate, a 3D memory array, a periphery circuit, and a conductive connection structure. The 3D memory array and the periphery circuit are stacked on the substrate. The periphery circuit includes a patterned metal layer and a contact structure electrically connected to the patterned metal layer. The conductive connection structure is electrically connected to the patterned metal layer. The 3D memory array is electrically connected to the periphery circuit via the conductive connection structure.
Claims18
A memory device, comprising:
- a substrate;
- a 3D memory array comprising a first metal layer and a second metal layer disposed beneath the first metal layer, wherein a longitudinal direction of the first metal layer is perpendicular to a longitudinal direction of the second metal layer;
- a periphery circuit stacked on the substrate, the periphery circuit comprising:
- a patterned metal layer comprising a first portion and a second portion;
- and
- a contact structure electrically connected to the patterned metal layer;
- and
- a first conductive connection structure and a second conductive connection structure, each of the first conductive connection structure and the second conductive connection structure being respectively electrically connected to a corresponding one of the two portions of the patterned metal layer, wherein the 3D memory array is electrically connected to the periphery circuit via the first conductive connection structure and the second conductive connection structure, and the first metal layer is electrically connected to the periphery circuit via the first conductive connection structure, and the second metal layer is electrically connected to the periphery circuit via the second conductive connection structure.
A manufacturing method of a memory device, comprising:
- providing a substrate;
- disposing a 3D memory array and a periphery circuit stacked on the substrate, wherein the 3D memory array comprises a first metal layer and a second metal layer disposed beneath the first metal layer, a longitudinal direction of the first metal layer is perpendicular to a longitudinal direction of the second metal layer, and the periphery circuit comprises:
- a patterned metal layer comprising a first portion and a second portion;
- and a contact structure electrically connected to the patterned metal layer;
- and
- forming a first conductive connection structure and a second conductive connection structure, each of the first conductive connection structure and the second conductive connection structure being respectively electrically connected to a corresponding one of the two portions of the patterned metal layer, wherein the 3D memory array is electrically connected to the periphery circuit via the first conductive connection structure and the second conductive connection structure, and the first metal layer is electrically connected to the periphery circuit via the first conductive connection structure, and the second metal layer is electrically connected to the periphery circuit via the second conductive connection structure.
Dependencies are inferred from the claim text.