Compact FDSOI device with Bulex contact extending through buried insulating layer adjacent gate structure for back-bias

A semiconductor device, comprising:

• an SOI substrate comprising an active semiconductor layer disposed on a buried insulating material layer, which is in turn formed on a base semiconductor material;
• a gate structure formed above said active semiconductor layer and having a gate insulation structure contacting said active semiconductor layer, wherein said active semiconductor layer positioned adjacent a first side of said gate structure is removed;
• a source/drain region positioned adjacent a second side of said gate structure, said second side being positioned on an opposite side of said gate structure than said first side;
• a first contact element contacting said source/drain region, and
• a second contact element located adjacent said first side of said gate structure, wherein said second contact element extends through said buried insulating material layer and into electrical contact with said base semiconductor material.

A semiconductor device structure, comprising:

• an SOI substrate comprising an active semiconductor layer disposed on a buried insulating material layer, which is in turn formed on a base semiconductor material;
• a first transistor device with a first gate structure disposed on said SOI substrate and having a first gate insulation structure contacting said active semiconductor layer;
• a second transistor device with a second gate structure disposed on said SOI substrate and laterally spaced apart from said first gate structure, wherein said second gate structure comprises a second gate insulation structure contacting said active semiconductor layer;
• and
• a plurality of contact elements for contacting source/drain regions provided at opposing sides of each of said first and second gate structures;
• wherein said first and second transistor devices share a common drain region;
• and
• wherein one of said plurality of contact elements contacts said common drain region and further extends through said buried insulating material layer and electrically contacts said base semiconductor material.