RDL-first packaging process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wei Lin, Shing-Chao Chen, Meng-Tse Chen, Ming-Da Cheng, Chung-Shi Liu
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Abstract
A method includes forming a first plurality of Redistribution Lines (RDLs) over a carrier, and bonding a device die to the first plurality of RDLs through flip-chip bonding. The device die and the first plurality of RDLs are over the carrier. The device die is molded in a molding material. After the molding, the carrier is detached from the first plurality of RDLs. The method further includes forming solder balls to electrically couple to the first plurality of RDLs, wherein the solder balls and the device die are on opposite sides of the first plurality of RDLs.
Claims20
A method comprising:
- forming a first plurality of Redistribution Lines (RDLs) over a carrier, wherein the forming the first plurality of RDLs comprises:
- forming a metal seed layer over a release layer, with the release layer being over the carrier;
- forming a dielectric layer over the metal seed layer;
- patterning the dielectric layer to reveal portions of the metal seed layer;
- and
- performing a plating to form the first plurality of RDLs;
- bonding a device die to the first plurality of RDLs through flip-chip bonding, wherein the device die and the first plurality of RDLs are over the carrier;
- molding the device die in a molding material;
- after the molding, detaching the carrier from the first plurality of RDLs;
- and
- forming solder balls to electrically couple to the first plurality of RDLs, wherein the solder balls and the device die are on opposite sides of the first plurality of RDLs.
A method comprising:
- forming a metal seed layer over a carrier;
- forming a dielectric layer over the metal seed layer;
- patterning the dielectric layer to reveal portions of the metal seed layer;
- forming a first plurality of RDLs, with the first plurality of RDLs comprising first portions extending into the dielectric layer, and second portions over the dielectric layer;
- forming a second plurality of RDLs over and electrically coupled to the first plurality of RDLs;
- bonding a device die to the second plurality of RDLs through flip-chip bonding, wherein the device die comprises:
- a semiconductor substrate;
- and
- a plurality of through-vias and metal pillars electrically connected to the additional through-vias;
- molding the device die in a molding material;
- grinding the molding material and the device die to reveal the metal pillars;
- and
- performing a singulation to form a plurality of packages, with the device die in one of the plurality of packages.
A method comprising:
- forming a metal seed layer over a carrier layer;
- forming a dielectric layer over the metal seed layer;
- patterning the dielectric layer to form openings, with portions of the metal seed layer revealed through the openings;
- forming a first plurality of RDLs, wherein portions of the plurality of RDLs extend into the openings;
- forming a second plurality of RDLs over and electrically coupled to the first plurality of RDLs;
- bonding a device die to the second plurality of RDLs through flip-chip bonding;
- forming a plurality of through-vias on the second plurality of RDLs;
- molding the plurality of through-vias and the device die in a molding material;
- after the molding, detaching the carrier from the first plurality of RDLs;
- forming a plurality of solder regions electrically coupled to the first plurality of RDLs, with the plurality of solder regions and the device die being on opposite sides of the first plurality of RDLs;
- after the detaching the carrier and the forming the plurality of solder regions, grinding the molding material to reveal the plurality of through-vias;
- and
- performing a singulation to form a plurality of packages, with the device die in one of the plurality of packages.
Dependencies are inferred from the claim text.