Methods for performing extended wafer-level packaging (eWLP) and eWLP devices made by the methods

An embedded Wafer-Level Packaging (eWLP) package comprising:

• at least first, second and third chips encapsulated inside of a molded material, the molded material having a front side and a back side, the front side of the molded material being co-planar with respective front sides of the first, second and third chips, a back side of the molded material being parallel to the front side of the molded material, the first, second and third chips having respective first electrical contacts disposed on respective front sides of the first, second and third chips and exposed thru the front side of the molded material, the first and third chips each having at least one second electrical contact disposed on a back side of the first and third chips;
• and
• a metal layer disposed on the back side of the molded material, the second electrical contacts disposed on the back sides of the first and third chips being electrically coupled to the metal layer, the back side of the second chip being in contact with the metal layer, and wherein the second chip comprises a bulk material having a predetermined electrical conductivity that is sufficiently high for conducting electrical current from the first electrical contact disposed on the front side of the second chip to the back side of the second chip, and wherein a purpose of the second chip is to conduct electrical current from the first electrical contact disposed on the front side of the second chip to the back side of the second chip such that an electrical connection is made via the second chip and the metal layer to said at least one second electrical contact disposed on the back side of the first chip.

An embedded Wafer-Level Packaging (eWLP) assembly comprising:

• a circuit board (CB) having a plurality of electrical contacts disposed on a first surface thereof;
• an eWLP package comprising:
• at least first and second chips encapsulated inside of a molded material, the molded material having a front side and a back side, the front side of the molded material being co-planar with respective front sides of the first and second chips, a back side of the molded material being parallel to the front side of the molded material, the first and second chips having respective first electrical contacts disposed on respective front sides of the first and second chips and exposed thru the front side of the molded material, the first chip having at least one second electrical contact disposed on a back side of the first chip, and
• a metal layer disposed on the back side of the molded material, the second electrical contact disposed on the back side of the first chip being electrically coupled to the metal layer, the back side of the second chip being in contact with the metal layer, and wherein the second chip comprises a bulk material having a predetermined electrical conductivity that is sufficiently high for conducting electrical current from the first electrical contact disposed on the front side of the second chip to the back side of the second chip;
• and
• a plurality of electrically-conductive contact elements, each electrically conductive contact element interconnecting one of the first electrical contacts disposed on the front sides of the first and second chips and one of the electrical contacts disposed on the first surface of the CB.