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US 9,425,168 B2Granted
Stud bump and package structure thereof and method of manufacturing the same
AssigneeWire Technology Co., Ltd.
InventorsTung-Han Chuang, Hsing-Hua Tsai, Jun-Der Lee
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Abstract
A stud bump structure, a package structure thereof and method of manufacturing the package structure are provided. The stud bump structure include a first chip; and a silver alloy stud bump disposed on the substrate, wherein the on-chip silver alloy stud bump includes Pd of 0.01˜10 wt %, while the balance is Ag. The package structure further includes a substrate having an on-substrate bond pad electrically connected to the on-chip silver alloy stud bump by flip chip bonding.
Claims11
A stud bump structure, comprising:
- a first chip;
- and
- a silver alloy stud bump disposed overlying the first chip, wherein a composition of the silver alloy stud bump is selected from one of a group consisting of
- 0.01 to 10 weight percent of palladium, 10 to 800 ppm of a trace metal and a balance of silver, wherein the trace metal comprises at least one of 10 to 600 ppm of beryllium, 10 to 100 ppm of cerium and 10 to 100 ppm of lanthanum;
- 0.01 to 10 weight percent of palladium, 0.01 to 10 weight percent of platinum, 10 to 800 ppm of a trace metal and a balance of silver, wherein the trace metal comprises at least one of 10 to 600 ppm of beryllium, 10 to 100 ppm of cerium and 10 to 100 ppm of lanthanum;
- and
- 0.01 to 10 weight percent of palladium, 0.01 to 10 weight percent of platinum, 0.01 to 10 weight percent of gold, 10 to 800 ppm of a trace metal and a balance of silver, wherein the trace metal comprises at least one of 10 to 600 ppm of beryllium, 10 to 100 ppm of cerium and 10 to 100 ppm of lanthanum.
4 more elements
A package structure, comprising:
- a first chip comprising an on-chip bonding pad;
- an on-chip silver alloy stud bump disposed overlying the on-chip bonding pad of the first chip;
- and
- a substrate comprising an on-substrate bonding pad electrically connected to the on-chip silver alloy stud bump by flip-chip bonding to the first chip, wherein
- a composition of the on-chip silver alloy stud bump is selected from one of a group consisting of
- 0.01 to 10 weight percent of palladium, 10 to 800 ppm of a trace metal and a balance of silver, wherein the trace metal comprises at least one of 10 to 600 ppm of beryllium, 10 to 100 ppm of cerium and 10 to 100 ppm of lanthanum;
- 0.01 to 10 weight percent of palladium, 0.01 to 10 weight percent of platinum, 10 to 800 ppm of a trace metal and a balance of silver, wherein the trace metal comprises at least one of 10 to 600 ppm of beryllium, 10 to 100 ppm of cerium and 10 to 100 ppm of lanthanum;
- and
- 0.01 to 10 weight percent of palladium, 0.01 to 10 weight percent of platinum, 0.01 to 10 weight percent of gold, 10 to 800 ppm of a trace metal and a balance of silver, wherein the trace metal comprises at least one of 10 to 600 ppm of beryllium, 10 to 100 ppm of cerium and 10 to 100 ppm of lanthanum.
6 more elements
Dependencies are inferred from the claim text.