Low alpha tin
AssigneeInternational Business Machines Corporation
InventorsCharles L. Arvin, Michael S. Gordon
Life of this patent
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AssigneeInternational Business Machines Corporation
InventorsCharles L. Arvin, Michael S. Gordon
Estimating the term…
A non alpha controlled Tin including Tin and a trace amount of Polonium may be converted to a low alpha emission Tin by concentrating and removing at least some of the Polonium. The non alpha controlled Tin may be a raw material or a solder bump upon a semiconductor wafer, chip, or carrier. The Polonium may be concentrated by oxidizing an exterior portion of the non alpha controlled Tin. If the non alpha controlled Tin is a raw material, the oxidized exterior portion of the non alpha controlled Tin may be stripped. If the non alpha controlled Tin is a solder bump, the oxidized exterior portion of the solder bump may be removed by applying flux to the solder bump, reflowing the solder bump to dissolve the oxidized exterior portion and the concentrated Po into the flux, and cleaning the flux from the solder bump.
A method of forming low alpha Tin (Sn) from uncontrolled alpha Sn including Sn and a trace amount of Polonium (Po), the method comprising:
A method of reducing alpha particle emission from a semiconductor device comprising a solder bump including Tin (Sn) and a trace amount of Polonium (Po), the method comprising:
A method of reducing alpha emission from a semiconductor chip carrier comprising a solder bump including Tin (Sn) and a trace amount of Polonium (Po), the method comprising:
Dependencies are inferred from the claim text.