Wafer bonding process and structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Yin Liu, Hsun-Chung Kuang, Cheng-Tai Hsiao, Xin-Hua Huang, Lan-Lin Chao
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method of fabricating the same are introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses are formed in the passivation layers and one or more conductive pads are formed in the recesses. One or more barrier layers are formed between the passivation layers and the conductive pads. The conductive pads of the first substrate are aligned to the conductive pads of a second substrate and are bonded using a direct bonding method.
Claims20
A method comprising:
- forming a first passivation layer over a first substrate;
- forming a first recess in the first passivation layer;
- forming a first barrier layer in the first recess;
- forming a first conductive pad in the first recess of the first passivation layer such that the first barrier layer is interposed between the first conductive pad and the first passivation layer;
- and
- bonding a second conductive pad on a second substrate directly to the first conductive pad.
A method comprising:
- forming a first passivation layer over a first substrate;
- forming a first plurality of recesses in the first passivation layer;
- forming a first barrier layer in the first plurality of recess;
- and
- forming a first plurality of conductive pads in the first plurality of recesses, the first barrier layer contacting bottoms and sidewalls of the first plurality of conductive pads, wherein a reduction potential difference between the first barrier layer and each of the first plurality of conductive pads is between about −1V and about +1V.
A method comprising:
- forming a first structure, wherein forming the first structure comprises:
- forming a first passivation layer over a first substrate;
- patterning the first passivation layer to form a first plurality of recesses in the first passivation layer;
- forming a first barrier layer on bottoms and sidewalls of the first plurality of recesses, the first barrier layer comprising a first barrier sublayer formed of a first material and a second barrier sublayer formed of a second material, the first material being different from the second material;
- and
- filling the first plurality of recesses with a third material to form a first plurality of conductive pads, the third material being different from the first material and the second material;
- and
- directly bonding the first structure to a second structure, the second structure comprising a second substrate having a second plurality of conductive pads thereon, wherein the second structure is bonded to the first structure such that the first plurality of conductive pads are aligned with and bonded to respective ones of the second plurality of conductive pads.
Dependencies are inferred from the claim text.