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US 9,425,154 B2Granted
Noise decoupling structure with through-substrate vias
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chung Chen, Chewn-Pu Jou, Sally Liu
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Abstract
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
Claims20
A method comprising:
- forming a first guard ring around a circuit region on a first side of a substrate, the first guard ring comprising a doped region of the substrate, the first guard ring having a first conductivity type, the circuit region having a second conductivity type;
- forming a first isolation trench around the circuit region on the first side of the substrate;
- forming through vias, the through vias extending through the first isolation trench to a second side of the substrate;
- forming a second guard ring encircling the first guard ring, wherein the through vias are laterally between the first guard ring and the second guard ring, the second guard ring having the first conductivity type;
- and
- forming a conductive layer over the second side of the substrate, the conductive layer being electrically coupled to the through vias, the conductive layer being over substantially an entirety of the second side of the substrate opposite of the circuit region.
3 more elements
A method comprising:
- forming active devices in an active device region on a first side of a substrate, the substrate in the active device region having a first conductivity type;
- forming a first isolation trench around the active devices on the first side of the substrate;
- forming a first guard ring around the active devices, the first guard ring having a second conductivity type;
- forming through substrate vias extending from the first side of the substrate to a second side of the substrate, the through vias extending through the first isolation trench, the through vias arranged in a pattern surrounding the active device region;
- forming a second guard ring, wherein the first guard ring is interposed between the second guard ring and the active device region, and wherein the through vias are interposed between the first guard ring and the second guard ring, the second guard ring having the second conductivity type;
- and
- forming a conductive layer over the second side of the substrate, the conductive layer being electrically coupled to the through vias, the conductive layer extending from a first through via to a second through via, wherein the active device region is interposed between the first through via and the second through via.
4 more elements
A method comprising:
- forming a first isolation trench and a second isolation trench around a circuit region on a first side of a substrate, the circuit region having a first well, the first well having a first conductivity type;
- forming a first guard ring around the circuit region, the first guard ring having a second conductivity type, at least a portion of the first guard ring being interposed between the first isolation trench and the second isolation trench, a bottom surface of the first guard ring being below a bottom of the first isolation trench and a bottom of the second isolation trench;
- forming through vias extending through the first isolation trench;
- and
- forming a conductive plate over a second side of the substrate, the conductive plate being electrically coupled to the through vias, the conductive plate covering a portion of the second side of the substrate opposing the circuit region.
2 more elements
Dependencies are inferred from the claim text.