Semiconductor devices having contacts with intervening spacers and method for fabricating the same

A semiconductor device, comprising:

• first patterns arranged on a substrate along a same longitudinal axis in a first direction,
• a second pattern on the substrate adjacent to the first patterns;
• an interlayer dielectric film pattern including a first opening and a second opening over the first patterns and the second pattern, respectively;
• a first wiring and a second wiring filling the first opening and the second opening, respectively,
• the first wiring extending over the substrate in the first direction, and
• opposing ends of the first wiring extending over a respective one of the first patterns in the first direction;
• and
• a spacer between a side upper portion of the first wiring and a side upper portion of the second wiring, the spacer separating the first wiring and the second wiring from each other,
• wherein the first patterns are electrically connected by the first wiring, and the first wiring is on the first patterns, and
• an upper surface of the first wiring, an upper surface of the second wiring and an upper surface of the spacer are formed at a same level.

A semiconductor device, comprising:

• a first contact pattern and a second contact pattern each traversing different active regions of a substrate;
• a third contact pattern on the substrate, the first and second contact patterns extending along a same side of the third contact pattern;
• an interlayer dielectric film pattern over the first, second and third contact patterns;
• and
• a multi-wiring structure extending through the interlayer dielectric film pattern, the multi-wiring structure including a first wiring and a second wiring separated from each other and a spacer adjoined to the first and second wirings,
• the first wiring being parallel with the third contact pattern,
• the first wiring being on and electrically connected to the first and second contact patterns, and
• the second wiring being electrically connected to the third contact pattern, and
• an upper surface of the first wiring, an upper surface of the second wiring, and an upper surface of the spacer being formed at a same level.

A semiconductor device, comprising:

• an interlayer dielectric film pattern over a substrate;
• a first wiring within the interlayer dielectric film pattern and having a first length in a first direction, the first wiring including a first sidewall and a second sidewall opposing each other;
• a second wiring within the interlayer dielectric film pattern and separated from the first wiring,
• the second wiring having a second length different from the first length in the first direction;
• and
• the second wiring including a third sidewall and a fourth sidewall opposing each other;
• and
• a spacer contacting the first wiring and the second wiring,
• the spacer electrically separating the first wiring and the second wiring from each other and being made of an etching resistant material different from the interlayer dielectric film pattern,
• the spacer being disposed between the first sidewall and the third sidewall, and on the second sidewall,
• the spacer including a first portion on an uppermost portion of the first sidewall, and a second portion between the second sidewall and the third sidewall,
• the first portion not contacting the first sidewall below the uppermost portion of the first sidewall, and
• the spacer not being disposed on the fourth sidewall.