Semiconductor device having through-electrode

An electronic component, comprising:

• a first semiconductor device including:
• a semiconductor substrate comprised of a semiconductor material;
• a surface electrode provided on a front surface of the semiconductor substrate through an insulating film;
• a via passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, the via having a wall including a flange portion inwardly projecting on a front surface portion of the semiconductor substrate, the flange portion being formed from the semiconductor substrate and comprising the semiconductor material;
• a via insulating film formed on the wall of the via;
• and
• a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, wherein
• the via insulating film has portions having different thickness thereof compensating for a step between the flange portion and a remaining portion of the wall, to planarize a contact surface with the through-electrode, and a thickness of the via insulating film around the flange portion of the via being thinner than a thickness of the via insulating film on the remaining portion of the wall;
• an interposer having a plurality of external terminals on a rear surface thereof, wherein
• the first semiconductor device is stacked above such that a rear surface thereof is facing to a front surface of the interposer;
• a second semiconductor device, having a rear surface bump, stacked on a front surface of the first semiconductor device so that the rear surface bump of the second semiconductor device is electrically connected to the through-electrode of the first semiconductor device;
• and
• a resin package sealing the first semiconductor device and the second semiconductor device.

A semiconductor device, comprising:

• a semiconductor substrate comprised of a semiconductor material;
• a surface electrode provided on a front surface of the semiconductor substrate through an insulating film;
• a via passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, the via having a wall including a flange portion inwardly projecting into a space defined by the via on a front surface portion of the semiconductor substrate, the flange portion being formed from the semiconductor substrate and comprising the semiconductor material;
• a via insulating film formed on the wall of the via;
• and
• a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, wherein
• the via insulating film has portions having different thickness thereof compensating for a step between the flange portion and a remaining portion of the wall, to planarize a contact surface with the through-electrode.