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US 9,425,115 B2Granted
Glass frit wafer bond protective structure
AssigneeFreescale Semiconductor, Inc.
InventorsRuben B. Montez, Robert F. Steimle
Life of this patent
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Abstract
A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically conductive ring between the support substrate and the cap substrate. The electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer bond ring around the semiconductor device.
Claims21
A bonded semiconductor device comprising:
- a device substrate with a semiconductor device located with respect to one side of the device substrate;
- a cap substrate overlying the one side of the device substrate and the semiconductor device, wherein the cap substrate includes a semiconductor material;
- a glass frit bond ring between the device substrate and the cap substrate, wherein the cap substrate is bonded to the device substrate at least by the glass frit bond ring;
- an electrically conductive ring between the device substrate and the cap substrate, wherein the electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer ring around the semiconductor device.
1 more element
Dependencies are inferred from the claim text.