Method to prevent lateral epitaxial growth in semiconductor devices
AssigneesInternational Business Machines Corporation, Globalfoundries Inc.
InventorsBalasubramanian Pranatharthiharan, Hui Zang
Life of this patent
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Abstract
A method for preventing epitaxial growth in a semiconductor device is described. The method includes cutting the fins of FinFET structure to form a set of exposed fin ends. A set of sidewall spacers are formed on the set of exposed fin ends, forming a set of spacer covered fin ends. The set of sidewall spacers prevent epitaxial growth at the set of spacer covered fin ends. A semiconductor device includes a set of fin structures having a set of fin ends. A set of inhibitory layers are disposed at the set of fin ends to inhibit excessive epitaxial growth at the fin ends.
Claims16
A method for preventing epitaxial growth in a semiconductor device comprising:
- cutting fins of FinFET structure to form a set of exposed fin ends;
- depositing a conformal layer of sidewall spacer material over the FinFET structure;
- performing an etch to remove the conformal layer of sidewall spacer material on horizontal surfaces leaving sidewall spacers on vertical portions of the FinFET structure including the set of exposed fin ends, the step of performing an etch producing a set of spacer covered fin ends;
- depositing a layer of silicon oxide in a well area over the conformal layer of sidewall spacer material;
- performing a chemical mechanical polishing step to remove excess silicon oxide;
- etching oxide areas around the FinFET structure to reveal the fins for further processing;
- and
- wherein the set of sidewall spacers prevent epitaxial growth at the set of spacer covered fin ends.
A method for preventing epitaxial growth in a semiconductor device comprising:
- cutting fins of a FinFET structure to form a set of exposed fin ends;
- performing a high dose implantation to the set of exposed fin ends, the step of performing the high dose implantation forming a set of amorphous silicon layer covered fin ends;
- and
- wherein the amorphous silicon layers prevent epitaxial growth at the set of amorphous silicon layer covered fin ends.
A method for preventing epitaxial growth in a semiconductor device comprising:
- cutting a set of fins of a FinFET structure to form a set of exposed fin ends, each fin of the set of fins having an exposed fin end and a pair of sidewalls, the FinFET structure further comprising dielectric material disposed along the sidewalls of the set of fins, wherein cutting the set of fins creates a vertical, planar surface comprised of the set of exposed fin ends and dielectric material on each side of an exposed fin end;
- depositing a conformal layer of sidewall spacer material over the FinFET structure;
- forming a set of sidewall spacers on the set of exposed fin ends in an etch step by etching the dielectric material to reveal the sidewalls of the fins for epitaxial growth and etching spacer material on vertical portions of the FinFET structure composed of the dielectric material while spacer material on the set of fin ends is retained;
- and
- wherein the set of sidewall spacers prevent epitaxial growth at the set of spacer covered fin ends.
Dependencies are inferred from the claim text.