Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devices
AssigneeGlobalfoundries Inc.
InventorsRuilong Xie, Min Gyu Sung, Chanro Park, Hoon Kim
Life of this patent
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Abstract
A method includes forming a plurality of fins above a substrate. At least one dielectric material is formed above and between the plurality of fins. A mask layer is formed above the dielectric material. The mask layer has an opening defined therein. A portion of the at least one dielectric material exposed by the opening is removed to expose top and sidewall surface portions of at least a subset of the fins. An etching process is performed to remove the portions of the fins in the subset exposed by removing the portion of the at least one dielectric material.
Claims20
A method, comprising:
- forming a plurality of fins above a substrate;
- forming at least one dielectric material above and between said plurality of fins;
- forming a mask layer above said dielectric material, said mask layer having an opening defined therein;
- removing a portion of said at least one dielectric material exposed by said opening to expose top and sidewall surface portions of at least a subset of said plurality of fins;
- and
- performing an etching process to remove said portions of said fins in said subset exposed by removing said portion of said at least one dielectric material.
A method, comprising:
- forming a plurality of fins above a substrate, each fin having a cap layer formed on a top surface;
- forming a liner layer above said plurality of fins and said cap layer;
- forming a dielectric layer above said liner layer;
- planarizing said dielectric layer to expose a top surface of said cap layer;
- forming a mask layer above said dielectric layer, said mask layer having an opening defined therein that exposes a portion of a length of each fin in a subset of said plurality of fins;
- removing a portion of said cap layer, said liner layer and said dielectric layer exposed by said opening to expose top and sidewall surface portions of said subset of fins;
- and
- performing an etching process to remove said portions of said fins in said subset exposed by removing said portion of said cap layer, said liner layer and said dielectric layer, said etching process proceeding along a first front defined along said top surface portions and a second front defined along said sidewall surface portions.
Dependencies are inferred from the claim text.