Complementary metal oxide semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMoon-seung Yang, Mohammad Rakib Uddin, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Seong-ho Cho
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Abstract
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.
Claims17
A method of manufacturing a complementary metal oxide semiconductor (CMOS) device, the method comprising:
- forming a buffer layer directly on a silicon substrate, the buffer layer including at least one of a Group IV and a Group III-V material;
- forming a material layer for an n-type transistor on the buffer layer;
- etching the material layer for the n-type transistor to form a first layer for the n-type transistor and a first pattern;
- forming an insulating layer on the first layer and the first pattern;
- etching the insulating layer to form a second pattern for selective growth, the second pattern exposing the buffer layer;
- selectively growing a second layer for a p-type transistor in the second pattern, the second layer contacting the buffer layer;
- and planarizing the second layer and the insulating layer to expose the first layer;
- wherein the first layer is isolated from the second layer by the insulating layer.
A method of manufacturing a complementary metal oxide semiconductor (CMOS) device, the method comprising:
- forming a buffer layer directly on a substrate, the buffer layer including at least one of a Group IV and a Group III-V material;
- forming a first material layer on the buffer layer, the first material layer including a group III-V material;
- etching the first material layer and the buffer layer to form a first layer and a first pattern, the first pattern exposing the substrate;
- forming an insulating layer on the first layer and the first pattern;
- etching the insulating layer to form a second pattern, the second pattern exposing the substrate;
- selectively growing a second material layer in the second pattern, the second material layer including a group IV material;
- and planarizing the second layer and the insulating layer to expose the first layer;
- wherein the first layer is isolated from the second layer by the insulating layer.
Dependencies are inferred from the claim text.