FinFET fabrication method using buffer layers between channel and semiconductor substrate
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorDeyuan Xiao
Life of this patent
Estimating the term…
Abstract
FinFET and fabrication method thereof. The FinFET fabrication method includes providing a semiconductor substrate; forming a plurality of trenches in the semiconductor substrate, forming a buffer layer on the semiconductor substrate by filling the trenches and covering the semiconductor substrate, and forming a fin body by etching the buffer layer. The FinFET fabrication method may further includes forming a insulation layer on the buffer layer around the fin body; forming a channel layer on the surface of the fin body; forming a gate structure across the fin body; forming source/drain regions in the channel layer on two sides of the gate structure; and forming an electrode layer on the source/drain regions.
Claims20
A FinFET fabrication method, comprising:
- providing a substrate for forming the FinFET;
- forming one or more trenches in the substrate;
- forming a buffer layer on the substrate, wherein the buffer layer fills the one or more trenches and covers a surface of the substrate;
- etching the buffer layer by a certain thickness to form a fin body on the remaining buffer layer;
- after forming the fin body, forming an insulation layer on the remaining buffer layer and having a top surface lower than a top surface of the fin body around the fin body;
- forming a channel layer on a surface of the fin body and on the insulation layer;
- forming a gate structure across the fin body on portion surface of the insulation layer and the channel layer;
- forming a source region and a drain region in the channel layer on two sides of the gate structure respectively;
- and
- forming an electrode layer on a surface of the source region and the drain region.
A FinFET fabrication method, comprising:
- providing a substrate for forming the FinFET;
- forming one or more trenches in the substrate;
- forming a buffer layer on the substrate, wherein the buffer layer further includes:
- a first buffer layer filling the one or more trenches and covering the surface of the substrate;
- and a second buffer layer formed on the first buffer layer;
- etching the buffer layer by a certain thickness to form a fin body;
- forming an insulation layer having a top surface lower than a top surface of the fin body on the buffer layer around the fin body;
- forming a channel layer on a surface of the fin body;
- forming a gate structure across the fin body on portion surface of the insulation layer and the channel layer;
- forming a source region and a drain region in the channel layer on two sides of the gate structure respectively;
- and
- forming an electrode layer on a surface of the source region and the drain region.
Dependencies are inferred from the claim text.