Methods of facilitating fabricating transistors

A method comprising:

• facilitating fabricating a transistor, the facilitating fabricating comprising:
• defining a channel region in a substrate, the channel region having at least one channel region sidewall adjoining an isolation material;
• recessing the isolation material, the recessing exposing an upper portion of the at least one channel region sidewall;
• forming an elongate notch in the upper portion of the at least one channel region sidewall, the elongate notch increasing a surface area of the at least one channel region sidewall;
• providing a gate structure over a gate interface area with the channel region, the gate interface area comprising at least the upper portion of the at least one channel region sidewall and an upper surface of the channel region, the gate extending within the elongate notch;
• and
• wherein the gate interface area comprising the upper portion of the at least one channel region sidewall reduces a threshold voltage of the gate structure.