Copper wiring forming method, film forming system, and storage medium
AssigneeTokyo Electron Limited
InventorsTadahiro Ishizaka, Takashi Sakuma, Osamu Yokoyama, Kai-Hung Yu
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Abstract
A Cu wiring forming method of forming Cu wiring that is to be arranged in contact with tungsten wiring, by filling Cu into a recess formed in a substrate, includes: removing a tungsten oxide formed on a surface of the tungsten wiring; forming a nitriding preventing film at least on the surface of the tungsten wiring in the recess; forming a barrier film that prevents diffusion of Cu, on a surface in the recess from above the nitriding preventing film; forming a liner film on the barrier film; and filling a Cu film on the liner film.
Claims11
A method of forming a Cu wiring in contact with tungsten wiring, by filling Cu into a recess formed in a substrate, the method comprising:
- removing a tungsten oxide formed on a surface of the tungsten wiring;
- forming a nitriding preventing film at least on the surface of the tungsten wiring in the recess;
- forming a barrier film that prevents diffusion of Cu, on a surface in the recess from above the nitriding preventing film;
- forming a liner film on the barrier film;
- and
- filling a Cu film on the liner film,
- wherein the barrier film is a metal nitride film or a metal carbonitride film and wherein the nitriding preventing film is a tantalum film.
Dependencies are inferred from the claim text.