Methods for producing interconnects in semiconductor devices
AssigneeApplied Materials, Inc.
InventorsIsmail T. Emesh, Roey Shaviv, Mehul Naik
Life of this patent
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Abstract
A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.
Claims18
A method for forming an interconnect in a workpiece, the method comprising:
- electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization layer is a single metal layer, and wherein the second metallization layer is a copper layer that is different from the metal of the first metallization layer;
- electrochemically depositing a copper cap layer after filling the feature;
- and
- annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.
A method for forming an interconnect in a workpiece, the method comprising:
- electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, wherein the first metallization layer is a cobalt layer, and wherein the metal of the second metallization layer is a copper or copper alloy layer, and wherein the second metallization layer is a fill or cap layer;
- electrochemically depositing a copper cap layer after filling the feature;
- and
- annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.
A method for forming an interconnect in a workpiece, the method comprising:
- electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the metal of the first metallization layer is copper, and wherein the metal of the second metallization layer is a copper alloy;
- electrochemically depositing a copper cap layer after filling the feature;
- and
- annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.
Dependencies are inferred from the claim text.