Method for forming semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Ting Chen, Che-Cheng Chang, Tai-Shin Cheng, Wei-Yin Shiao
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate. The method includes forming a mask layer over the dielectric layer. The mask layer has an opening exposing a portion of the dielectric layer. The method includes removing the portion of the dielectric layer through the opening to form a recess in the dielectric layer. The method includes removing the mask layer. The method includes performing a plasma cleaning process over the dielectric layer. The plasma cleaning process uses a carbon dioxide-containing gas.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a dielectric layer over a semiconductor substrate;
- forming a mask layer over the dielectric layer, wherein the mask layer has an opening exposing a portion of the dielectric layer;
- removing the portion of the dielectric layer through the opening to form a recess in the dielectric layer;
- removing the mask layer;
- and
- after removal of the mask layer, performing a plasma cleaning process over the dielectric layer, wherein the plasma cleaning process uses a carbon dioxide-containing gas.
A method for forming a semiconductor device structure, comprising:
- forming a first conductive structure over a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate and covering the first conductive structure;
- forming a mask layer over the dielectric layer, wherein the mask layer has an opening exposing a portion of the dielectric layer;
- removing the portion of the dielectric layer to form a recess in the dielectric layer, wherein the recess exposes the first conductive structure;
- removing the mask layer;
- and
- performing a plasma cleaning process over the dielectric layer and the first conductive structure to form a metal oxide layer over the first conductive structure, wherein the plasma cleaning process uses a carbon dioxide-containing gas.
A method for forming a semiconductor device structure, comprising:
- forming a dielectric layer over a semiconductor substrate;
- forming a polymer mask layer over the dielectric layer, wherein the polymer mask layer has an opening exposing a portion of the dielectric layer;
- removing the portion of the dielectric layer to form a recess in the dielectric layer;
- removing the polymer mask layer;
- and
- after removal of the polymer mask layer, performing a plasma cleaning process over the dielectric layer, wherein the plasma cleaning process uses a carbon dioxide-containing gas.
Dependencies are inferred from the claim text.